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UK funding (435 775 £) : High-temperature Silicon Carbide Electronics (HITSIC) Ukri01/10/2008 UK Research and Innovation, Royaume Uni
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High-temperature Silicon Carbide Electronics (HITSIC)
| Abstract | This project will demonstrate a new Silicon Carbide (SiC) materials process to realise high-temperature electronics (above 300°C with 400° C as target) for energy applications which needs basic research to address challenges associated with realising a scaleable semiconductor process. The project will model the device process and performance, will asses prototype devices, and will develop and demonstrate practical SiC-based circuits for power electronic gate drive and sensor applications focused on the energy and harsh environment sectors. In addition the project will research and develop new SiC device models and assess these against practical results. The novel and timely basic research project will research Silicon Carbide (SiC) materials and processes for Complementary Metal Oxide Semiconductor (CMOS) structures to provide a design and manufacturing capability for high temperature SiC low-voltage electronics. Target applications are: efficient electrical energy generation, distribution and utilisation; extreme environment sensors and instrumentation for oil, gas, and renewables, and; automotive and aerospace systems. Significant commercial benefits in all of the target application areas identified will be realised. |
| Category | Collaborative R&D |
| Reference | 100517 |
| Status | Closed |
| Funded period start | 01/10/2008 |
| Funded period end | 30/06/2012 |
| Funded value | £435 775,00 |
| Source | https://gtr.ukri.org/projects?ref=100517 |
Participating Organisations
| RAYTHEON SYSTEMS LIMITED |
£435 775,00 |
| UNIVERSITY OF STRATHCLYDE |
Cette annonce se réfère à une date antérieure et ne reflète pas nécessairement l’état actuel. L’état actuel est présenté à la page suivante : Raytheon Systems Ltd., Harlow, Royaume Uni.
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