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Financement de l’UE (7 190 000 €) : Dispositifs d’alimentation et applications innovants et fiables à base de nitrure Hor 22/11/2016 Programme de recherche et d'innovation de l'UE « Horizon »
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Dispositifs d’alimentation et applications innovants et fiables à base de nitrure
The main objective of this proposal is to develop reliable GaN-based power devices and systems for high and medium power electronics targeting industrial and automotive applications and bringing the GaN power devices another step towards the wide usability in the energy saving environment to further tap the full potential which this new material brings along. This proposal addresses two subjects, one of which is medium power (till 10kW) GaN-on-Si based lateral HEMT structures (Normally OFF devices), with special focus on high reliability, which is still a major blocking item to allow wide-spread market adoption. Hence, the impact of the GaN material quality, in combination with the device layout in view of long-term reliability will be addressed. The project aims an in-depth reliability study and qualification strategy development whereby the study of the impact of dislocations and other structural disturbances inside the materials on the long term device reliability will be specifically addressed. In addition, this proposal aims to demonstrate new device concepts with increased robustness and reliability, which will be realized, evaluated and tested thoroughly. This will demonstrate how it is possible to overcome the known limitations of the GaN on Silicon technology, like e.g. the vertical leakage, trapping phenomena and/or breakdown of lateral HEMTs and the p-GaN gate related reliability issues. The current proposal also contains the development of novel device architecture (dual channel, substrate removal, e-mode), as well as the exploration of new material systems (Aluminum Nitride (Al-based) devices) which can also largely contribute to overcome drawbacks of the GaN on Si technology. The applicability of the novel GaN-on-Si concepts in form of an industrial inverter will be demonstrated finally, with the development of an innovative low inductance packaging system for power devices, making full benefits of the fast switching capability of GaN-based power devices.
| Belgan B.V. | 1 825 271 € |
| Centre National de la Recherche Scientifique CNRS | 636 084 € |
| Constructions Electroniques + Telecommunications | 502 500 € |
| Fraunhofer Gesellschaft ZUR Forderung DER Angewandten Forschung e. V. | 626 165 € |
| Kokuritsu Daigaku Hojin Kyushu Daigaku | 0,00 € |
| National University Corporation MIE University | 0,00 € |
| Robert Bosch GmbH | 950 000 € |
| Siemens AG | 750 000 € |
| Soitec Belgium N.V. | 744 980 € |
| Universita Degli Studi Di Padova | 650 000 € |
| Universiteit Gent | 505 000 € |
https://cordis.europa.eu/project/id/720527
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